| 摘要 |
<p>A gate electrode of a semiconductor device and a forming method thereof are provided to increase a manufacturing yield of the semiconductor device by reducing defects due to disconnection of a gate electrode in a second active pattern part. A gate electrode of a semiconductor device includes a substrate, an isolation layer pattern, and a conductive layer pattern(122). The substrate includes a first active pattern(106a) and a second active pattern(108a). The first active pattern has a first sidewall slope. The second active pattern has a second sidewall slope. The second sidewall slope is lower than the first sidewall slope. The substrate includes a first recess. The first recess is generated at a gate electrode forming part in the first and second active patterns. The first recess includes an active fence protruded from a bottom surface thereof. The isolation layer pattern includes a second recess. The second recess is formed between the first and second active patterns. The second recess is formed at the gate electrode forming part in order to be connected with the first recess. A conductive layer pattern is formed in the inside of the first and second recesses. The conductive layer pattern has the same pitch in the first and second active patterns.</p> |
