发明名称 DRY ETCHER
摘要 A dry etch apparatus is provided to prevent leakage of helium gas and damage of a wafer by maintaining a pulling-down state of a lift pin though a polymer is deposited between the lift pin and a cathode. A dry etch apparatus includes a cathode(200), an electrostatic chuck(300), a plurality of lift pins(400), and a focus ring. The cathode includes a plurality of holes(211,212). The electrostatic chuck is positioned at an upper part of the cathode. The electrostatic chuck includes a plurality of holes. The lift pins are positioned in the inside of the holes of the cathode. The lift pins are formed to shift vertically a wafer(W) through the holes of the electrostatic chuck. The lift pins include a plurality of ball bearings(464). The ball bearings come in contact with lateral surfaces of the holes of the cathode. The focus ring is coupled with an upper part of the electrostatic chuck.
申请公布号 KR20090066962(A) 申请公布日期 2009.06.24
申请号 KR20070134714 申请日期 2007.12.20
申请人 DONGBU HITEK CO., LTD. 发明人 KWON, HYUNG BAE
分类号 H01L21/02;H01L21/3065 主分类号 H01L21/02
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