METHOD FOR FORMING DUAL GATE DIELECTRICS

摘要

A method for forming a dual gate insulating layer is provided to stabilize a gate forming process and to prevent a leaning effect of a gate by preventing excessive loss of an isolation layer to form uniformly a surface of the isolation layer. A first gate insulating layer is formed on an upper surface of a semiconductor substrate(100) having first and second regions including an isolation region. A mask pattern is formed to cover the second region in order to expose the first region. The first gate insulating layer corresponding to the first region is removed in a dry etch manner by using the mask pattern. A removal process is performed to remove the mask pattern. A second gate insulating layer(110) is formed on the first and second regions.