| 摘要 |
The memory has a conductor line for orienting magnetization of storage layers of each memory point (50). Storage layers (55, 58) are coupled magneto-statically through an anti-ferromagnetic layer (70) separating the storage layers, such that magnetization of the storage layers is located in an anti-parallel configuration, when the temperature in magnetic tunnel junctions (51, 52) exceeds the blocking temperature of the layer (70) and in the absence of the magnetic field in the memory or under the influence of low intensity magnetic field at magneto-static coupling between the storage layers. An independent claim is also included for a method for realizing writing of memory points of a magnetic memory. |
