METHOD FOR RINSING DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE

摘要

A method for cleaning an insulating layer of a semiconductor device is provided to secure a required critical dimension and a required patterning margin of an insulating layer by preventing the reduction of the critical dimension of the insulating layer according to the suppression of the loss of the insulating layer in a horizontal direction. An insulating layer is formed on an upper surface of a semiconductor substrate(100) having a patterned part. A mask pattern(104) is formed on an upper surface of the insulating layer in order to expose the patterned part. The insulating layer is etched in a dry etch manner by using the mask pattern as a barrier. An insulating layer pattern(102a) is formed by etching the insulating layer in the dry etch manner. A removal process is performed to remove the mask pattern.