| 摘要 |
<p>An optical proximity effect correction method is provided to improve accuracy of OPC(Optical Proximity Correction) by reducing a CD(Critical Dimension) difference through a biasing operation according to a PMOS device and an NMOS devices in a mask manufacturing process. A database extraction process is performed to extract a database of an entire area of a chip with respect to a layout of a dual poly gate(S10). The extracted database is divided into a PMOS area and an NMOS area(S30). NMOS transistors are arranged in an NMOS region. PMOS transistors are arranged in a PMOS region. A biasing process is performed to bias the NMOS area and the PMOS area by applying boolean logic(S50). An OPC process for an entire region of the biased database is performed(S60). A verification process is performed to verify the corrected database(S70).</p> |
