发明名称 BLANK MASK AND METHOD FOR FABRICATING THE SAME
摘要 <p>A blank mask and a manufacturing method thereof are provided to increase a yield of a mask by shortening a TAT(Turn Around Time). A blank mask includes a transparent substrate(200), a phase shift layer(210), a light shielding layer, and a resist layer. The phase shift layer is formed on a front surface of the transparent substrate. The light shielding layer is formed in a light shielding region on the phase shift layer. The resist layer is formed on the front surface of the transparent substrate including the light shielding layer. The phase shift layer is made of one of MoSi, MoSiN, and MoSiON. The light shielding layer is made of one of Cr and Cr2O3 or a stacked layer of Cr and Cr2O3.</p>
申请公布号 KR20090066937(A) 申请公布日期 2009.06.24
申请号 KR20070134682 申请日期 2007.12.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, DAE HO
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
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