Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells

摘要

Metallization contact structures and methods for forming a multiple-layer electrode structure on a solar cell include depositing a conductive contact layer on a semiconductor substrate and depositing a metal bearing ink onto a portion of the conductive contact layer, wherein the exposed portions of the conductive contact layer are adjacent to the metal bearing ink. The conductive contact layer is patterned by removing the exposed portions of the conductive contact layer from the semiconductor substrate. The metal bearing ink is aligned with one or more openings in a dielectric layer of the semiconductor substrate and with unexposed portions of the conductive contact layer. The unexposed portions of the conductive contact layer are interposed between the metal bearing ink and the dielectric layer of the semiconductor substrate such that the conductive contact layer pattern is aligned with metal bearing ink. The semiconductor substrate is thermally processed to form a current carrying metal gridline by sintering the metal bearing ink.