| 摘要 |
A method of manufacturing a planar junction, separate absorption, grading and multiplication avalanche photodiode, and the photodiode produced by said method. The photodiode comprises an absorption layer (6), a multiplication layer (3) and a charge layer (4) doped with Carbon and an N-type window layer (7) doped with a P-type dopant which is in contact with a bias electrode (10) to which bias voltage is applied so as to generate an electric field in the photodiode. The doping of the window layer with a P-type dopant is performed by local diffusion of dopant atoms within a limited volume of the window layer adjacent and underneath the bias electrode such that the window layer is substantially free of dopant atoms outside said limited volume.
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