| 摘要 |
A barrier film consisting of a ZrB2 film is formed by using a film forming device provided with a plasma generating means composed of a coaxial resonant cavity provided with a conductor arranged spaced apart from and around a non-metal pipe for introducing reaction gas, and a microwave supply circuit for exciting the above coaxial resonant cavity, wherein the plasma generating means is constituted such that the internal height of the coaxial resonant cavity is integral multiples of 1/2 of an exciting wavelength, and gas injected from one end of the non-metal pipe is excited by a microwave at a position not covered with the conductor of the non-metal pipe and is released from the other end in the form of plasma.
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