| 摘要 |
A method for forming a wiring layer of a semiconductor device is provided to reduce efficiently a total wiring resistance by forming differently quality of a bottom of a contact hole and quality of an adhesive layer. An interlayer dielectric(120) is formed on a semiconductor substrate(100). A contact hole is formed by etching the interlayer dielectric. An adhesive layer(130a, 130b) containing carbon is formed on an inner surface of the contact hole. The carbon is removed from the inside of the adhesive layer corresponding to a bottom surface of the contact hole by performing a plasma process for the adhesive layer. A tungsten nucleation layer is formed on the adhesive layer. A tungsten layer is formed on the tungsten nucleation layer in order to bury the contact hole. A tungsten wiring layer is formed by removing the tungsten layer, the tungsten nucleation layer, and the adhesive layer from the interlayer dielectric.
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