| 摘要 |
A manufacturing method of a semiconductor device is provided to prevent a clipping effect of a linear nitride layer and to improve a refresh characteristic of a device by forming an isolation layer according to a HDP(High Density Plasma) method for performing one period of deposition-etch-deposition, twice. A first insulating layer(141) for burying a part of an inside of a trench is formed by using one of an ALD(Atomic Layer Deposition) method and a SOD(Spin-On Dielectric) method. A second insulating layer(142) is formed within the trench which is partially buried by the first insulating layer. The trench is not fully buried by the second insulating layer. A third insulating layer(143) is formed by oxidizing a polysilicon layer, in order to bury fully the trench which is filled with the first insulating layer and the second insulating layer.
|
