| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting device that is superior in light emitting characteristics and power saving. <P>SOLUTION: A quantum well light emitting layer 103 is formed by laminating alternately an Mg<SB>0.1</SB>Zn<SB>0.9</SB>O barrier layer and a Cd<SB>0.1</SB>Zn<SB>0.9</SB>O well layer. Thus, the confinement effect of the Cd<SB>0.1</SB>Zn<SB>0.9</SB>O well layer is improved and the light emitting characteristic and power saving can be made high. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
