| 摘要 |
<p>A hard mask removal method is provided to lower an aspect ratio of a space between wirings according to a height level of a hard mask removed in an interlayer dielectric gap-fill process by removing easily the hard mask through a burning process. A hard mask removal method includes a lamination process, a patterning process, and a removal process. The lamination process is performed to laminate sequentially a conductive layer, a photoresist layer(210a), and a hard mask layer on an upper surface of a semiconductor substrate(200). The patterning process is performed to form a wiring pattern by patterning the hard mask layer, the photoresist layer, and the conductive layer. The removal process is performed to remove simultaneously the photoresist layer and the hard mask layer.</p> |
