| 摘要 |
<P>PROBLEM TO BE SOLVED: To endure a use in a high temperature service condition and suppress the deterioration of a lifetime in a light emitting diode element. <P>SOLUTION: On the surface of an opposite side to an active layer 3 of a second conduction type semiconductor crystal layer 4, a penetrating dislocation defective 11 is exposed, the internal surface of the penetrating dislocation defective 11 and its periphery are covered with a material (a coating portion 13) which has non-ohmic contact nature to a second conduction type semiconductor crystal layer 4. A material of ohmic contact nature is not joined to the second conduction type semiconductor crystal layer 4 in the vicinity of the penetrating dislocation defective 11, so that a current does not flow in the vicinity of the penetrating dislocation defective 11. As a result, an increase in leakage current in the vicinity of the penetrating dislocation defective accompanied by an increase in lighting time duration can be suppressed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
