| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of the heat-dissipating structure for a semiconductor device which is applicable to a semiconductor device reduced in thickness, and obtains high heat dissipation effects. <P>SOLUTION: The manufacturing method of the heat-dissipating structure for the semiconductor device includes a step of providing a board 200, a step of mounting the semiconductor device 100 on the board 200, and a step of forming a heat dissipating film 300' on the board 200 so that the heat-dissipating film 300' covers the upper surface of the semiconductor device 100 and leaves the side faces of the semiconductor device 100 exposed, by supplying a liquid heat-dissipating material. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
