NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT, MEMORY SYSTEM COMPRISING THE SAME AND DRIVING METHOD OF THE NONVOLATILE MEMORY DEVICE

摘要

A non-volatile memory device, a memory system including the same, and a driving method are provided, which improve the program performance by using the write circuit. A non-volatile memory device comprises the memory cell array(10) and write circuit. The memory cell array comprises a plurality of nonvolatile memory cells. The write circuit writes data of the first logic condition in the nonvolatile memory cell of the first group when the first program operation is performed by using the first internal boosted voltage generated inside. The write circuit writes data of the second logic state in the nonvolatile memory cell of the second group when the second program operation is performed by using the outside step-up voltage provided from outside.