FABRICATING METHOD FOR GALLIUM NITRIDE WAFER

摘要

A method for manufacturing a GaN wafer is provided to control effectively stress generated between a grown GaN layer and a base substrate by forming previously an insertion layer of a network structure having a pin hole on a base substrate. A base substrate(100) is arranged on a GaN growing path. A silicon nitride insertion layer(150) of a network structure is formed on an upper surface of the base substrate. A GaN layer is grown on an upper surface of the silicon nitride insertion layer. A plurality of fine voids are formed between the GaN layer and the silicon nitride insertion layer. The network structure of the silicon nitride insertion layer includes silicon nitrides connected with each other and a plurality of fine pin holes. The fine pin holes are formed locally at the silicon nitride insertion layer.