发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A manufacturing method of a semiconductor device is provided to prevent generation of filling and cracks and to enhance second mounting reliability by removing a broken layer as a starting point of the filling or cracks of a sealing resin. A plurality of semiconductor devices are formed on a semiconductor wafer(10). The semiconductor device forming surface of the semiconductor wafer is sealed with a resin. The semiconductor wafer is divided into semiconductor devices in order to form the semiconductor devices. An area of a scribe line(14) between the adjacent semiconductor devices of the semiconductor wafer is scrapped thinly. A laser irradiation process is performed to irradiate a laser beam on a broken layer of the area of the scribe line in order to recrystallize the broken layer. The scrapping process and the laser irradiation process are performed after the semiconductor device forming process and before the resin sealing process.
申请公布号 KR20090066239(A) 申请公布日期 2009.06.23
申请号 KR20080128709 申请日期 2008.12.17
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 ITO DAISUKE
分类号 H01L21/301;H01L21/78;H01L23/50 主分类号 H01L21/301
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