| 摘要 |
An apparatus for detecting a refresh period of a semiconductor memory includes a signal generating unit that generates a plurality of signal pairs, each of which includes one among a plurality of first reference signals that are respectively generated with the same timing as first to (N-1)-th pulses of a refresh period signal of order N, and one among a plurality of second reference signals that correspond to the plurality of first reference signals and are respectively generated with the same timing as second to N-th pulses of the refresh period signal. A refresh period detecting unit detects the period of the refresh period signal using one among the plurality of signal pairs.
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