LIGHT EMITTING DIODE HAVING ACTIVE REGION OF MULTI QUANTUM WELL STRUCTURE

摘要

A light emitting diode having an active region of a multi-quantum well structure is provided to represent efficient light-emitting characteristics in environment of variable operation conditions by selecting an active region including a relatively thick barrier layer and a relatively thin barrier layer. An N type compound semiconductor layer(57) is made of a gallium nitride-based material. A P-type compound semiconductor layer is the gallium nitride-based material. An active region is interposed between the N-type compound semiconductor layer and the P-type compound semiconductor layer. A thickness of a barrier layer is larger than a thickness of a well layer. The thinnest barrier layer and the thickest barrier layer are positioned between well layers. The thickness of the thickest barrier layer is within a range of 1.3 to 3 times of the thickness of the thinnest barrier layer.