发明名称 |
Method for fabricating low-defect-density changed orientation Si |
摘要 |
The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal. The invention also provides a low-defect density changed-orientation Si formed by ATR for use in hybrid orientation substrates.
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申请公布号 |
US7550369(B2) |
申请公布日期 |
2009.06.23 |
申请号 |
US20070873928 |
申请日期 |
2007.10.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DE SOUZA JOEL PEREIRA;FOGEL KEITH EDWARD;OTT JOHN ALBRECHT;SADANA DEVENDRA KUMAR;SAENGER KATHERINE LYNN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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