| 摘要 |
<p>A semiconductor device having a recess gate and a manufacturing method thereof are provided to prevent deterioration of electrical characteristics of a semiconductor device by reducing an electric field concentration effect. A recess pattern is formed on an upper surface of a substrate(21). A gate insulating layer(29) is formed on a surface of the recess pattern. The gate electrode is formed to bury the recess pattern formed on the gate insulating layer. A part of the gate electrode is protruded from the upper surface of the substrate. An electric field concentration buffering layer is formed at an edge of an upper side of the recess pattern. The recess pattern has a protruded part which is formed at the edge of the upper side thereof.</p> |
