SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A manufacturing method of a semiconductor device is provided to manufacture a semiconductor device product of high quality by preventing corrosion of a core material of a wider line pattern due to permeation of reactive components or radical particles. A first silicon-containing layer containing silicon is formed on a semiconductor substrate(W). An organic material layer(4) is formed. A second silicon-containing layer different from the first silicon-containing layer is formed. A first mask having a narrow width pattern and a wide width pattern is formed. The second silicon-containing layer is patterned into the narrow width pattern and the wide width pattern by performing an anisotropic etch process using the first mask. The organic material layer is patterned into the narrow width pattern and the wide width pattern. A third silicon-containing layer is formed on the semiconductor substrate in order to cover the patterned second silicon-containing layer and the patterned organic material layer. A sidewall of the third silicon-containing layer is formed. A second mask is formed with the organic material layer in order to cover selectively the second silicon-containing layer and the sidewall of the second silicon-containing layer. The second silicon-containing layer having the narrow width pattern is removed by using the second mask. The organic material layer having the narrow width pattern and the second mask are removed by using the etch selectivity of the second silicon-containing layer having the wide width pattern, the first silicon-containing layer, and the third silicon-containing layer.