| 摘要 |
A semiconductor device is provided to form a resistor circuit by using a stable polycrystalline resistor irrespective of a variation due to an influence from a semiconductor manufacturing process. A semiconductor device includes a semiconductor substrate, a first insulating layer, a resistor, a wiring layer, a second insulating layer, a first metal line, a third contact hole, and a second metal line. The first insulating layer is arranged on the semiconductor substrate. The resistor is arranged on the first insulating layer. The resistor is made of a polycrystalline silicon(3). The wiring layer is separated from the resistor. The second insulating layer is arranged on the resistor and the wiring layer. The first metal line is formed to connect a first contact hole and a second contact hole of the second insulating layer with each other. The first contact hole is arranged in a single phase of one side of the resistor. The second contact hole is arranged on the wiring layer. The third contact hole is arranged in a single phase of the other side of the resistor of the second insulating layer. The second metal line is formed to cover a domain between the first and third contact holes arranged in both ends of the resistor. The second metal line is connected to a fourth contact hole on the wiring layer.
|
