发明名称 |
Light generating semiconductor device and method of making the same |
摘要 |
In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor film. A conductive substrate is bonded to a surface of the electrode film using a conductive adhesive. After bonding the conductive substrate, the GaN or AlGaN substrate is separated from the GaN-based semiconductor portion to form the semiconductor light generating device.
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申请公布号 |
US7550776(B2) |
申请公布日期 |
2009.06.23 |
申请号 |
US20080071440 |
申请日期 |
2008.02.21 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
AKITA KATSUSHI |
分类号 |
H01L33/32;H01L21/00;H01L33/40 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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