发明名称 Resist composition and patterning process
摘要 A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
申请公布号 US7550247(B2) 申请公布日期 2009.06.23
申请号 US20050205980 申请日期 2005.11.04
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NAKASHIMA MUTSUO;HAMADA YOSHITAKA;TAKEMURA KATSUYA;NODA KAZUMI;FUJII TOSHIHIKO
分类号 G03C1/73;G03F7/039;G03F7/20;G03F7/36 主分类号 G03C1/73
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