发明名称 Buried ridge waveguide laser diode
摘要 Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.
申请公布号 US7551658(B2) 申请公布日期 2009.06.23
申请号 US20060633739 申请日期 2006.12.05
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 OH SU HWAN;KIM KI SOO;KWON OH KEE;BAEK YONG SOON
分类号 H01S5/00 主分类号 H01S5/00
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