发明名称 |
Method for fabricating an NMOS transistor |
摘要 |
A method for fabricating an NMOS transistor is disclosed. First, a substrate having a gate structure thereon is provided. A carbon implantation process is performed thereafter by implanting carbon atoms into the substrate for forming a silicon carbide region in the substrate. Subsequently, a source/drain region is formed surrounding the gate structure. By conducting a carbon implantation process into the substrate and a corresponding amorphorized implantation process before or after the carbon implantation process is completed, the present invention eliminates the need of forming a recess for accommodating an epitaxial layer composed of silicon carbide while facilitates the formation of silicon carbide from the combination of both implantation processes.
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申请公布号 |
US7550336(B2) |
申请公布日期 |
2009.06.23 |
申请号 |
US20060562402 |
申请日期 |
2006.11.21 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSIAO TSAI-FU;CHEN PO-YUAN;CHEN JUNG-CHIN |
分类号 |
H01L21/8238;H01L21/20;H01L21/36 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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