发明名称 |
Semiconductor device having an undercoat layer and method of manufacturing the same |
摘要 |
In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.
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申请公布号 |
US7550782(B2) |
申请公布日期 |
2009.06.23 |
申请号 |
US20050233113 |
申请日期 |
2005.09.23 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
MURAKAMI MASANORI;WATANABE TEPPEI;TSUKIMOTO SUSUMU;ITO KAZUHIRO;ITO JUN;MORIYAMA MIKI;SHIBATA NAOKI |
分类号 |
H01L31/0224;H01L33/06;H01L33/12;H01L33/32;H01L33/42 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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