| 发明名称 |
Semiconductor device and method of fabricating the same |
| 摘要 |
A semiconductor device includes a silicon nitride (SiN) film provided on a crystal surface of a nitride semiconductor, the SiN film having a hydrogen content equal to or smaller than 15 percent.
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| 申请公布号 |
US7550398(B2) |
申请公布日期 |
2009.06.23 |
| 申请号 |
US20050093238 |
申请日期 |
2005.03.30 |
| 申请人 |
EUDYNA DEVICES, INC. |
发明人 |
TANAKA MASAHIRO;KOMATANI TSUTOMU |
| 分类号 |
H01L21/31;H01L21/318;H01L21/338;H01L21/469;H01L21/8242;H01L29/20;H01L29/51;H01L29/778;H01L29/812;H01L33/06;H01L33/32;H01L33/44 |
主分类号 |
H01L21/31 |
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代理人 |
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