发明名称 |
Stress engineering using dual pad nitride with selective SOI device architecture |
摘要 |
A method for engineering stress in the channels of MOS transistors of different conductivity using highly stressed nitride films in combination with selective semiconductor-on-insulator (SOI) device architecture is described. A method of using compressive and tensile nitride films in the shallow trench isolation (STI) process is described. High values of stress are achieved when the method is applied to a selective SOI architecture.
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申请公布号 |
US7550364(B2) |
申请公布日期 |
2009.06.23 |
申请号 |
US20070668790 |
申请日期 |
2007.01.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;HENSON WILLIAM K.;RIM KERN;WILLE WILLIAM C. |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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