| 摘要 |
<p>A manufacturing method of a phase-change memory device is provided to improve reliability of a device without causing a variation of reset current in a device operating process by aligning correctly a bottom electrode contact and a phase-change material layer. A phase-change memory device manufacturing method includes a process for forming a phase-change material layer pattern and a process for forming a top electrode material layer pattern(111a) in order to reduce an area of a bottom electrode contact through a side etch process. A line type metal layer is formed on a semiconductor substrate including a lower structure. A phase-change material layer is formed on the semiconductor substrate. The phase-change material layer pattern crosses the line type metal layer. The bottom electrode contact is formed to pattern the line type metal layer in a self-alignment manner with respect to the phase-change material layer pattern.</p> |
