发明名称 |
Fully siliciding regions to improve performance |
摘要 |
Structures and related methods including fully silicided regions are disclosed. In one embodiment, a structure includes a substrate; a partially silicided region located in an active region of an integrated circuit formed on the substrate; a fully silicided region located in a non-active region of the integrated circuit, and wherein the partially and fully silicided regions are formed from a common semiconductor layer.
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申请公布号 |
US7550808(B2) |
申请公布日期 |
2009.06.23 |
申请号 |
US20070624324 |
申请日期 |
2007.01.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J. |
分类号 |
H01L29/78;H01L21/3205 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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