| 摘要 |
A CMOS image sensor is provided to protect internal semiconductor devices from strong intensity of external light by controlling an opening of a piezo shutter formed in an inside of a planarization layer according to the amount of the external light by connecting electrically the piezo shutter with a photo diode of a lower part. A CMOS image sensor(100) includes a photo diode(120), an insulating layer(130), a metal layer(140), a planarization layer(160), a piezo shutter(170), a metal line(180), and a micro lens(190). The photo diode generates electrons according to intensity of external light. The insulating layer is formed on an upper part of the photo diode. The metal layer includes patterns formed in the inside of the insulating layer. The planarization layer is formed on an upper part of the insulating layer. The piezo shutter is formed in the inside of the planarization layer. The piezo shutter is formed to control the amount of the external light for irradiating the photo diode. The metal line is formed to connect electrically the photo diode with piezo shutter through the insulating layer and planarization layer. The micro lens is formed on an upper part of the planarization layer. The micro lens is formed to focus the external light on the photo diode.
|
