发明名称 |
Nonplanar device with thinned lower body portion and method of fabrication |
摘要 |
A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.
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申请公布号 |
US7550333(B2) |
申请公布日期 |
2009.06.23 |
申请号 |
US20060440313 |
申请日期 |
2006.05.23 |
申请人 |
INTEL CORPORATION |
发明人 |
SHAH UDAY;DOYLE BRIAN;BRASK JUSTIN K.;CHAU ROBERT S.;LETSON THOMAS A. |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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