发明名称 Semiconductor device and method for forming the same
摘要 A semiconductor device may include a semiconductor substrate having a first dopant type. A first semiconductor region within the semiconductor substrate may have a plurality of first and second portions (44, 54). The first portions (44) may have a first thickness, and the second portions (54) may have a second thickness. The first semiconductor region may have a second dopant type. A plurality of second semiconductor regions (42) within the semiconductor substrate may each be positioned at least one of directly below and directly above a respective one of the first portions (44) of the first semiconductor region and laterally between a respective pair of the second portions (54) of the first semiconductor region. A third semiconductor region (56) within the semiconductor substrate may have the first dopant type. A gate electrode (64) may be over at least a portion of the first semiconductor region and at least a portion of the third semiconductor region (56).
申请公布号 US7550804(B2) 申请公布日期 2009.06.23
申请号 US20060390796 申请日期 2006.03.27
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 KHEMKA VISHNU K.;BOSE AMITAVA;ROGGENBAUER TODD C.;ZHU RONGHUA
分类号 H01L29/76 主分类号 H01L29/76
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