发明名称 |
ULTRA-THIN SUBSTRATE FOR SEMICONDUCTOR PACKAGE, AND FABRICATION METHOD OF THE SAME, FABRICATION METHOD FOR SEMICONDUCTOR DEVICE THEREBY |
摘要 |
<p>A ultra-thin semiconductor package substrate, a manufacturing method of a semiconductor package substrate, and a manufacturing method of a semiconductor device by using the same are provided to reduce a thickness of a substrate by eliminating a CCL(Copper-Clad Laminate). A gold plating process and a nickel plating process are sequentially performed to fill a region from which a first photoresist layer is removed. A copper-plated layer is electrically connected with a nickel-plated layer exposed through a second photoresist region. The copper-plated layer is formed to cover a surface including a second photoresist(130). The copper-plated layer includes a flat top surface. A third photoresist layer is formed on the copper-plated layer. The exposed copper-plated layer is removed by performing an etch process using a third photoresist. A part of a fourth photoresist layer is removed by an exposure-development process in order to expose a part of a circuit pattern. A fourth photoresist(160) is removed to connect electrically the nickel-plated layer and the gold-plated layer with the exposed circuit pattern.</p> |
申请公布号 |
KR20090065117(A) |
申请公布日期 |
2009.06.22 |
申请号 |
KR20070132566 |
申请日期 |
2007.12.17 |
申请人 |
SIMM TECH CO., LTD. |
发明人 |
JUNG, CHANG BO;OH, CHOON HWAN |
分类号 |
H01L23/31;H01L23/02 |
主分类号 |
H01L23/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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