| 摘要 |
<p>A method for manufacturing a reticle having a phase shift mask is provided to prevent generation of a reaction product between remaining ions by removing ions remaining to a MoSi layer through an oxygen plasma process. A halftone film and a shielding film are formed on a reticle substrate(110). A photoresist pattern is formed on a chrome layer by electron beam lithography. The chrome layer and a MoSi layer are selectively etched by using the photoresist pattern as an etching mask. The etched chrome layer is removed by performing a wet etching process. Ions remaining to the MoSi layer(115') are removed through an oxygen plasma process.</p> |
