发明名称 |
DEPOSITION APPARATUS AND DEPOSITION METHOD |
摘要 |
A deposition apparatus and a deposition method are provided to enhance uniformity of a layer in a deposition process by forming a temperature gradient within a substrate. A deposition apparatus(100) is positioned at a place which is opposite to a first electrode. A processing target is loaded on the first electrode. A second electrode is formed to generate plasma. The processing target is used for absorbing the heat between the second electrode and the first electrode. An electrical heating unit controls a heat flow by generating the heat flow to a peripheral region. The electrical heating unit is positioned in a central region of the processing target.
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申请公布号 |
KR20090065472(A) |
申请公布日期 |
2009.06.22 |
申请号 |
KR20080128842 |
申请日期 |
2008.12.17 |
申请人 |
KOCHI INDUSTRIAL PROMOTION CENTER;CASIO COMPUTER CO., LTD. |
发明人 |
NISHIMURA KAZUHITO;SASAOKA HIDEKI |
分类号 |
H01L21/205;H01L21/324 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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