发明名称 DEPOSITION APPARATUS AND DEPOSITION METHOD
摘要 A deposition apparatus and a deposition method are provided to enhance uniformity of a layer in a deposition process by forming a temperature gradient within a substrate. A deposition apparatus(100) is positioned at a place which is opposite to a first electrode. A processing target is loaded on the first electrode. A second electrode is formed to generate plasma. The processing target is used for absorbing the heat between the second electrode and the first electrode. An electrical heating unit controls a heat flow by generating the heat flow to a peripheral region. The electrical heating unit is positioned in a central region of the processing target.
申请公布号 KR20090065472(A) 申请公布日期 2009.06.22
申请号 KR20080128842 申请日期 2008.12.17
申请人 KOCHI INDUSTRIAL PROMOTION CENTER;CASIO COMPUTER CO., LTD. 发明人 NISHIMURA KAZUHITO;SASAOKA HIDEKI
分类号 H01L21/205;H01L21/324 主分类号 H01L21/205
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