SEPERATING METHOD OF SEMICONDUCTOR LASER DIODE

摘要

A separating method of a semiconductor laser diode is provided to improve yield of a semiconductor laser device by preventing damage to a ridge and a plane of cleavage. A semiconductor laser structure(150) having a ridge(147) is formed on a substrate(110). The semiconductor laser structure includes an n-type semiconductor layer, an active layer, a p-type semiconductor layer, an n-type electrode, a p-type electrode, and a ridge. The n-type electrode and the p-type electrode apply a current to the n-type semiconductor layer and the p-type semiconductor layer. The ridge is protruded from the p-type semiconductor layer. A reference cutting line for separating the semiconductor laser structure is formed on a surface of the substrate. A light emitting surface is formed by separating the substrate according to the reference cutting line. A separate semiconductor laser diode(150a) is formed by cutting the substrate into a vertical direction of a light emitting surface direction.