| 摘要 |
An etching apparatus for forming a pattern is provided to omit a cleaning process which removes residue or foreign material on a top part of a substrate by exhausting the foreign material generated in an etching process. A chamber(11) in which a substrate is loaded is maintained into a vacuum state. A gas supply part supplies an etching gas to the chamber. An exhaust part exhausts foreign material generated in an etching process using the etching gas. A screen(14) is positioned on a top part of a pattern forming surface(2) of a substrate(1) loaded inside the chamber. The screen concentrates the etching gas on a part except for the pattern. The etching gas is made from ClF3 and BCl3. A gas flow of the etching gas is 50~200sccm.
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