| 摘要 |
A pattern transfer method, a lithographic apparatus and a carrier medium are provided to realize multiple patterning with improved resolution without physical and chemical changes of resist. A pattern transfer method comprises the following steps of: exposing a first region(308) to a first radiation dose, which can transform the first region of a phase change material layer formed on a substrate into an amorphous phase; exposing a second region(312) to a second radiation dose, which can transform the second region of the phase change material layer into the amorphous phase; and removing some regions of the phase change material layer except for the first and second regions in order to form patterns without the damage to the first and second regions. The phase change material layer contains chalcogenide alloy.
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