| 摘要 |
A method for manufacturing a metal line of a semiconductor device is provided to prevent generation of voids among a via hole, a trench, and a barrier metal layer due to particles in a barrier metal layer forming process by removing the particles with a low-temperature oxide layer as a sacrificial layer. An insulating layer is formed on a semiconductor substrate(S10). A capping layer is formed on the insulating layer (S20). A via hole and a trench are formed on the insulating layer and the capping layer(S30). A low-temperature oxide layer is formed along a top part of the capping layer and inner walls of the via hole and the trench(S40). The low-temperature oxide is removed by cleaning the semiconductor substrate(S50). A barrier metal layer is formed along the top part of the capping layer and the inner walls of the via hole and the trench(S60). The metal seed layer is formed on the barrier metal layer(S70). A metal layer is formed on the metal seed layer(S80).
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