发明名称 LIGHT EMITTING DIODE PACKAGE
摘要 <p>A light emitting diode package is provided to simplify a connection structure with an external terminal by using an external electrode of a silicon wafer. An electrode layer is formed on a silicon wafer(110). The electrode layer comprises a first internal electrode, a second internal electrode, a first external electrode(121), and a second external electrode(123). The first internal electrode and the second internal electrode are formed on a top surface(112) of the silicon wafer. A light emitting diode chip(130) is adhered in the first internal electrode and the second internal electrode. The light emitting diode chip is bonded by a wire. The light emitting diode chip is connected to the first internal electrode and the second internal electrode through a conductive adhesive or the wire. The first external electrode and the second external electrode are connected to the first internal electrode and the second internal electrode. A light transmitting resin material(140) of a lens shape or a dome shape is formed on the light emitting diode chip.</p>
申请公布号 KR20090064717(A) 申请公布日期 2009.06.22
申请号 KR20070132022 申请日期 2007.12.17
申请人 LG INNOTEK CO., LTD. 发明人 SON, WON JIN
分类号 H01L33/62;H01L33/50 主分类号 H01L33/62
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