NAND FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A NAND flash memory device and a manufacturing method thereof are provided to form constantly a channel length and to control constantly a critical voltage in each of memory cells by maintaining a uniform critical dimension in a fine mask pattern forming process for etching a conductive layer. A plurality of conductive lines(312) are formed in a first direction on an upper surface of a semiconductor board. The conductive lines are parallel to each other. A plurality of contact pads and the conductive lines are formed with one body at one end of the conductive lines in order to connect the conductive lines with an external circuit. A plurality of dummy conductive lines are extended from the contact pads to a second direction different from the direction. The dummy conductive lines have different lengths.