MODELING FOR INDIUM DIFFUSION IN STRAINED

摘要

A modeling method is provided to perform an accurate prediction modeling by providing a method for extracting an input variable for designing and manufacturing a nano scale semiconductor device. A method for extracting a device design and a manufacturing input variable about indium(110) impurity in a strained silicon(100) structure includes a process for predicting a diffusion path of the indium impurity by applying a first principle calculation method. The method for extracting a device design and a manufacturing input variable includes a process for predicting diffusion barrier energy of the indium impurity by applying the first principle calculation method. The method for extracting a device design and a manufacturing input variable includes a process for predicting the diffusion barrier energy of the indium impurity according to stress applied to a structure.