发明名称 THE TRANSPARENT ELECTRONIC DEVICES AND MANUFACTURING METHOD THEREOF
摘要 <p>A transparent electronic device and a manufacturing method thereof are provided to improve total mobility and stability by forming thinly a second channel layer with a material having low resistivity and high mobility on a top part, a bottom part or an inner part. A first channel layer(130) is formed on an upper surface of a substrate(110). The first channel layer includes a source area, a drain region, and a channel region. A second channel layer(140) is formed in one of a top part, a bottom part or an inner part of the channel region. The channel layer is made of a material having low resistivity and high mobility. A transparent electrode(160) is formed on an upper part of the source region and an upper part of the drain region. A gate insulating layer is formed in a top part of the transparent electrode. The gate electrode is formed at a top part of the gate insulating layer.</p>
申请公布号 KR20090065263(A) 申请公布日期 2009.06.22
申请号 KR20070132744 申请日期 2007.12.17
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 CHEONG, WOO SEOK;YANG, SHIN HYUK;BYUN, CHUN WON;PARK, SANG HEE;HWANG, CHI SUN
分类号 H01L29/772;H01L29/786 主分类号 H01L29/772
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