发明名称 |
THE TRANSPARENT ELECTRONIC DEVICES AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>A transparent electronic device and a manufacturing method thereof are provided to improve total mobility and stability by forming thinly a second channel layer with a material having low resistivity and high mobility on a top part, a bottom part or an inner part. A first channel layer(130) is formed on an upper surface of a substrate(110). The first channel layer includes a source area, a drain region, and a channel region. A second channel layer(140) is formed in one of a top part, a bottom part or an inner part of the channel region. The channel layer is made of a material having low resistivity and high mobility. A transparent electrode(160) is formed on an upper part of the source region and an upper part of the drain region. A gate insulating layer is formed in a top part of the transparent electrode. The gate electrode is formed at a top part of the gate insulating layer.</p> |
申请公布号 |
KR20090065263(A) |
申请公布日期 |
2009.06.22 |
申请号 |
KR20070132744 |
申请日期 |
2007.12.17 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHEONG, WOO SEOK;YANG, SHIN HYUK;BYUN, CHUN WON;PARK, SANG HEE;HWANG, CHI SUN |
分类号 |
H01L29/772;H01L29/786 |
主分类号 |
H01L29/772 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|