发明名称 High density stepped, non-planar flash memory
摘要 A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same column. The second plurality of memory cells are coupled to the first plurality of memory cells through a series connection of their source/drain regions.
申请公布号 US7550341(B2) 申请公布日期 2009.06.23
申请号 US20060472899 申请日期 2006.06.22
申请人 MICRON TECHNOLOGY, INC. 发明人 FORBES LEONARD;AHN KIE Y.
分类号 H01L21/8238 主分类号 H01L21/8238
代理机构 代理人
主权项
地址