METHOD OF POLYCRISTALLINE SILICON INGOTS OBTAINING

摘要

FIELD: chemistry. ^ SUBSTANCE: polycristalline silicon is obtained by melting of the input silicon materials in the sintered silica crucible having the wolfram heater in 100% hydrogen atmosphere at atmospheric or elevated pressure. The hydrogen solves in the melted silicon; during flux solidification the solid sample is kept at temperature close to freezing point in order to make for silicon grain growth in the solid phase and obtaining of the polycristalline silicon ingots. ^ EFFECT: decrease of the admixtures and small silicon grains content in the polycristalline silicon. ^ 10 cl, 23 dwg, 1 tbl, 2 ex